Design, Fabrication, and Characterization of Nano-scale Cross-Point Hafnium Oxide-Based Resistive Random Access Memory
نویسندگان
چکیده
منابع مشابه
Resistive Random Access Memory (RRAM)
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-theart RRAM device performances, characterization, and modeling techniques are summarized, and the design conside...
متن کاملDevelopment and Characterization of metal oxide RRAM memory cells
In this work a new class of non-volatile memories, based on metal oxide resistive switching is studied. Resistive ram cells based on ALD grown HfO2 and Al2O3 layers are fabricated by means of optical lithography in multiple dimensions and two different configurations: in via and crossbar. On the next step, the cells are structurally and electrically characterized. The effects of material choice...
متن کاملBoosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation
A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (VSET and VRESE...
متن کاملMultilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
Articles you may be interested in Multi-layered nanocomposite dielectrics for high density organic memory devices Appl. TiO 2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J. Nonvolatile memory cell effect in multilayered Ni 1 − x Fe x self-assembled nanoparticle arrays in polyimide
متن کاملSelector Devices for High Density Cross-point ReRAM
ReRAM has been considered as a promising candidate to overcome scaling limits of the conventional FLASH memory due to its superior performance. To realize the high density memory, 3D cross-point array or vertical ReRAM are necessary [1]. To integrate cross-point (4F) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected d...
متن کامل